dual series switching diode bal99 ba w56 ba v70 ba v99 silicon epitaxial planar type features small surface mounting ty pe high reliability high speed ( t rr < 1.5 ns ) mechanical dat a case : sot -23 termi nals : solder plated, solderable per mil-st d-750, method 2026 mounting p osition : any maximum ratings (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit repetitive peak reverse voltage v rrm 70 v reverse voltage v r 70 v peak forward surge current t p = 1 us i fsm 2.0 a repetitive peak forward current i frm 450 ma forward current i f 215 ma average forward current v r = 0 i fav 715 ma power dissipation p d 225 mw junction temperature t j 175 o c storage temperature t stg -55 +150 o c f o r m o s a m s sot-23 dimensions in inches and (millimeters) electrical characteristics (at t a =25 o c unless otherwise noted) parameter conditions symbol min. typ. max. unit i f = 10ma v f 0.855 v i f = 150ma v f 1.250 v v r = 70v i r 2.5 ua v r = 20v , t j = 150 o c i r 30 ua v r = 70v , t j = 150 o c i r 50 ua breakdown current i r = 100ua , t p /t = 0.01 t p = 0.3ms v (br) 70 v diode capacitance v r = 0 , f = 1mhz , v hf = 50mv c d 1.5 pf reverse recovery time i f =10ma, v r = 10ma, i rr = 0.1 x i r , r l =100 ohm t rr 6 ns forward voltage reverse current 0.033 (0.85) 0.045 (1.15) r 0.05 (0.002) 0.055 (1.40) 0.047 (1.20) 0.102 (2.60) 0.094 (2.40) 0.028 (0.70) 0.020 (0.50) (a) (b) (c) 0 . 1 1 8 ( 3 . 0 0 ) 0 . 1 1 0 ( 2 . 8 0 ) . 0 7 9 ( 2 . 0 0 ) . 0 7 1 ( 1 . 8 0 ) 0 . 0 4 0 ( 1 . 0 2 ) 0 . 0 3 5 ( 0 . 8 8 ) 0 . 0 1 7 ( 0 . 4 2 ) 0 . 0 1 5 ( 0 . 3 8 ) sing le(a lt) com mon ano de com mon ca tho de bal9 9 ba w56 ba v70 ser ies ba v99
rating and characteristic curves for each diode (bal99 baw56 ba v70 bav99) notes: notes: ? t recovery time equivalent test circuit 820 ohm +10v 2 k 0.1 uf 100uh 0.1 uf dut 50 ohm output pulse generator 50 ohm input sampling oscilloscope i f t r v r t 10% 90% t p t r t ir(rec)=1 ma output pulse (if=ir=10ma;measured at ir(rec)=1ma) 1. a2.0 kohm variable resistor adjusted for a forward current (if) of 10ma. 2. input pulse is adjusted so ir(peak) is equal to 10 ma. 3. tp >> trr. notes : 100 0.2 0.4 0.6 0.8 1.0 1.2 10 1.0 0.1 o ta=85 c o ta=25 c o ta=-40 c fig.1-typical forward characteristics f o r w a r d c u r r e n t , ( m a ) forward volt age,(v) 10 0 1.0 0.1 0.01 0.001 10 20 30 40 50 o ta=55 c o ta=85 c o ta=125 c o ta=150 c o ta=25 c r e v e r s e l e a k a g e c u r r e n t , ( u a ) reverse voltage, (v) fig.2 - leakage current characteristics 0.68 0 0.64 0.60 0.56 0.52 2 4 6 8 fig.3-typical junction capacit ance j u n c t i o n c a p a c i t a n c e , ( p f ) reverse voltage,(v)
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